SI4948BEY-E3 VISHAY [Vishay Siliconix], SI4948BEY-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4948BEY-E3
• Description: Dual P-Channel 60-V (D-S) 175 MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si4948BEY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
25
20
15
10
V
5
0
GS
0
b
= 10 thru 5 V
Parameter
1
V
a
a
DS
2
Output Characteristics
− Drain-to-Source Voltage (V)
a
3
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
4
5
Symbol
V
r
r
I
DS(on)
t
t
I
I
I
GS(th)
V
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
6
SD
t
t
rr
fs
gs
gd
r
f
g
g
4 V
3 V
7
8
New Product
V
DS
V
I
D
DS
^ −1 A, V
= −30 V, V
V
I
= −60 V, V
V
V
V
V
V
F
DS
V
V
V
GS
DS
DS
GS
DS
= −2 A, di/dt = 100 A/ms
DS
DD
DD
Test Condition
I
S
= 0 V, V
= −4.5 V, I
= V
= −5 V, V
= −2 A, V
= −15 V, I
= −10 V, I
= −60 V, V
= −30 V, R
= −30 V, R
f = 1 MHz
GEN
GS
GS
GS
, I
GS
= −10 V, I
= −10 V, R
D
= 0 V, T
GS
GS
D
D
D
= −250 mA
= "20 V
GS
L
L
= −3.1 A
= −3.1 A
= −0.2 A
= −10 V
= 0 V
= 30 W
= 30 W
= 0 V
J
D
25
20
15
10
= 70_C
g
= −3.1 A
5
0
= 6 W
0
1
V
GS
Transfer Characteristics
T
25_C
− Gate-to-Source Voltage (V)
Min
C
−25
−1
2
= 125_C
3
0.100
0.126
Typ
−0.8
14.5
8.5
2.2
3.7
14
10
15
50
35
30
S-40430—Rev. A, 15-Mar-04
Document Number: 72847
−55_C
4
"100
Max
0.120
0.150
−1.2
−10
−3
−1
22
15
22
75
55
50
5
Unit
nA
mA
mA
nC
ns
V
A
W
W
S
V
W
6