STS10DN3LH5 STMicroelectronics, STS10DN3LH5 Datasheet - Page 8
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STS10DN3LH5
Manufacturer Part Number
STS10DN3LH5
Description
MOSFET 2N-CH 30V 10A 8-SOIC
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STS10DN3LH5.pdf
(13 pages)
Specifications of STS10DN3LH5
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
4.6nC @ 5V
Input Capacitance (ciss) @ Vds
475pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10011-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STS10DN3LH5
Manufacturer:
STMicroelectronics
Quantity:
135
Part Number:
STS10DN3LH5
Manufacturer:
ST
Quantity:
20 000
Test circuits
3
8/13
Figure 13. Switching times test circuit for
Figure 15. Test circuit for inductive load
Figure 17. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
Test circuits
resistive load
switching and diode recovery times
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100µH
V
2200
µF
(BR)DSS
3.3
µF
3.3
µF
1000
Doc ID 15624 Rev 1
µF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 14. Gate charge test circuit
Figure 16. Unclamped inductive load test
Figure 18. Switching time waveform
V
P
i
V
W
0
0
i
=20V=V
P
w
10%
2200
µF
1kΩ
GMAX
td
circuit
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
µF
100nF
90%
td
STS10DN3LH5
off
t
off
3.3
µF
D.U.T.
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
G
DD
DD