ECH8620-TL-E SANYO, ECH8620-TL-E Datasheet

ECH8620-TL-E

Manufacturer Part Number

ECH8620-TL-E

Description

MOSFET N/P-CH 100V 2/1.5A ECH8

Manufacturer

SANYO

Datasheet

1.ECH8620-TL-E.pdf (6 pages)

Specifications of ECH8620-TL-E

Fet Type

N and P-Channel

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

260 mOhm @ 1A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

2A, 1.5A

Gate Charge (qg) @ Vgs

13.8nC @ 10V

Input Capacitance (ciss) @ Vds

650pF @ 20V

Power - Max

1.3W

Mounting Type

Surface Mount

Package / Case

8-ECH

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Vgs(th) (max) @ Id

Other names

869-1157-2

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Ordering number : ENA0659

ECH8620

Features

Specifications

Absolute Maximum Ratings at Ta=25°C

Electrical Characteristics at Ta=25°C

Marking : FN

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

[N-channel]

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

The ECH8620 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and

ultrahigh-speed switching, thereby enabling high-density mounting.

4V drive.

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer ' s products or

equipment.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

V (BR)DSS

R DS (on)1

R DS (on)2

V GS (off)

N-Channel and P-Channel Silicon MOSFETs

General-Purpose Switching Device

Applications

Symbol

V GSS

V DSS

I GSS

 yfs 

I DSS

Tstg

I DP

Tch

P T

I D

P D

SANYO Semiconductors

I D =1mA, V GS =0V

V DS =100V, V GS =0V

V GS =±16V, V DS =0V

V DS =10V, I D =1mA

V DS =10V, I D =1A

I D =1A, V GS =10V

I D =0.5A, V GS =4V

PW≤10µs, duty cycle≤1%

Mounted on a ceramic board (900mm

ECH8620

Conditions

✕0.8mm) 1unit

✕0.8mm)

DATA SHEET

22107PE TI IM TC-00000523

N-channel

min

100

1.2

1.6

--55 to +150

100

±20

Ratings

150

1.3

1.5

typ

200

230

2.7

P-channel

Continued on next page.

max

--100

--1.5

±20

- -12

±10

260

325

2.6

No. A0659-1/6

Unit

mΩ

µA

°C

Related parts for ECH8620-TL-E

ECH8620-TL-E Summary of contents

Page 1

... Ordering number : ENA0659 ECH8620 Features The ECH8620 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and • ultrahigh-speed switching, thereby enabling high-density mounting. 4V drive. • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) ...

Page 2

... Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 Bottom View ECH8620 Symbol Conditions Ciss V DS =20V, f=1MHz Coss V DS =20V, f=1MHz Crss V DS =20V, f=1MHz t d (on) See specified Test Circuit See specified Test Circuit (off) See specified Test Circuit. ...

Page 3

... IT10620 [Nch] --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 2.5 3.0 3.5 4.0 IT10621 --50V -- =50Ω OUT G ECH8620 50Ω --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 Drain-to-Source Voltage 10V 0 --0.5 --1.0 --1.5 --2.0 --2.5 Gate-to-Source Voltage [Pch] --0.8 --0.9 --1 ...

Page 4

... Drain Current 0.001 0.2 0.4 0.6 0.8 Diode Forward Voltage ECH8620 [Nch] 1000 Ta=25 ° C 900 800 700 600 500 --0.5A 400 300 200 100 IT10622 [Nch] 1000 900 800 700 600 500 400 300 200 100 ...

Page 5

... V DS =50V = Total Gate Charge 1 Operation in this 2 area is limited (on). 0 Ta=25 °C 3 Single pulse 2 ✕0.8mm) 1unit 2 Mounted on a ceramic board (900mm 0. 0.1 1.0 10 Drain-to-Source Voltage ECH8620 [Nch] 1000 V DD =50V 100 1 1.0 0.01 IT10626 [Nch] 2 f=1MHz 1000 100 IT10627 [Nch 50V -- --1 ...

Page 6

... Ambient Temperature °C Note on usage : Since the ECH8620 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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