IRF7314QTRPBF International Rectifier, IRF7314QTRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7314QTRPBF
• Description: MOSFET HEX P-CH DUAL 20V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7314QTRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 5.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 913pF @ 15V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -5.2A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 58mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -700mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7314QTRPBFCT

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‚
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
I
I
V
t
Q
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
S
SM
R
I
rr
d(on)
r
d(off)
f
DSS
2
fs
SD
(BR)DSS
GS(th)
rr
g
gs
gd
iss
oss
rss
Repetitive rating; pulse width limited by
DS(on)
R
(BR)DSS
max. junction temperature.
Starting T
G
= 25Ω, I
/∆T
J
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
= 25°C, L = 45mH
AS
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
= -5.2A.
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
––– 0.009 –––
––– 0.049 0.058
-0.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-20
6.8
ƒ
„
0.082 0.098
Surface mounted on FR-4 board, ≤ 10sec
Pulse width ≤ 300µs duty cycle ≤
–––
–––
–––
–––
–––
–––
––– -100
–––
913
512
260
2.1
9.3
44
54
19
18
26
41
38
-1.0
-1.0
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
-43
-25
3.2
-3.0
66
81
29
14
V/°C
nC
nC
ns
pF
V
V
Ω
V
S
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = -100A/µs
showing the
T
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= -5.2A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= V
= 10V, I
= -16V, V
= -16V, V
= -16V
= -15V
= 0V, I
= -4.5V, I
= -2.7V, I
= -12V
= 12V
= -4.5V
= -10V
= -4.5V
= 0V
GS
Conditions
, I
D
S
F
D
D
Conditions
‚
= -250µA
= -3.0A, V
= -3.0A
D
D
GS
GS
= -250µA
= -5.2A
= -5.2A
= -4.42A
‚
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
‚
J
‚
G
= 150°C
= 0V
‚
S
D