IRF7314QTRPBF International Rectifier, IRF7314QTRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7314QTRPBF
• Description: MOSFET HEX P-CH DUAL 20V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7314QTRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 5.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 913pF @ 15V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -5.2A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 58mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -700mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7314QTRPBFCT

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0.01
100
0.1
700
600
500
400
300
200
100
10
1
1.0E-05
0
Fig 16. Maximum Avalanche Energy
25
Duty Cycle = Single Pulse
Starting T J , Junction Temperature (°C)
0.05
0.10
0.01
50
Vs. Temperature
1.0E-04
TOP
BOTTOM 10% Duty Cycle
I D = -5.2A
75
Fig 15. Typical Avalanche Current Vs.Pulsewidth
100
Single Pulse
1.0E-03
125
150
1.0E-02
175
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. ∆T
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 12a, 12b.
T
t
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
av
av =
thJC
D (ave)
jmax
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
1.0E-01
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
= 1/2 ( 1.3·BV·I
I
Allowed avalanche Current vs
avalanche
assuming ∆ Tj = 25°C due to
avalanche losses
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
1.0E+00
= P
D (ave)
jmax
pulsewidth,
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
1.0E+01
]
thJC
tav
jmax
1.0E+02
7
is