IRF7314QTRPBF International Rectifier, IRF7314QTRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7314QTRPBF
• Description: MOSFET HEX P-CH DUAL 20V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7314QTRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 5.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 913pF @ 15V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -5.2A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 58mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -700mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7314QTRPBFCT

6
0.080
0.070
0.060
0.050
0.040
0.030
Fig 13a. Basic Gate Charge Waveform
Fig 11. Typical On-Resistance Vs.
Fig 13b. Gate Charge Test Circuit
2.0
12V
V
G
V
GS
Same Type as D.U.T.
Q
Current Regulator
-V GS, Gate -to -Source Voltage (V)
GS
.2µF
Gate Voltage
50KΩ
3mA
Current Sampling Resistors
4.0
Charge
.3µF
Q
Q
GD
G
I
G
I D = -5.2A
D.U.T.
I
D
6.0
+
-
V
DS
8.0
0.430
0.330
0.230
0.130
0.030
1600
1200
800
400
0
25
Fig 14. Maximum Avalanche Energy
Fig 12. Typical On-Resistance Vs.
0
Starting Tj, Junction Temperature
50
10
Vs. Drain Current
Drain Current
-I D , Drain Current ( A )
75
VGS = -2.7V
20
100
VGS = -4.5V
30
TOP
BOTTOM
125
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( C)
°
40
150
-2.1A
-4.4A
-5.2A
I D
50
175