IRF7314QTRPBF International Rectifier, IRF7314QTRPBF Datasheet - Page 6
![MOSFET HEX P-CH DUAL 20V 8-SOIC](/photos/5/44/54411/irf7314qtrpbf_sml.jpg)
IRF7314QTRPBF
Manufacturer Part Number
IRF7314QTRPBF
Description
MOSFET HEX P-CH DUAL 20V 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF7314QTRPBF
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
58 mOhm @ 5.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.2A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
29nC @ 4.5V
Input Capacitance (ciss) @ Vds
913pF @ 15V
Power - Max
2.4W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Continuous Drain Current Id
-5.2A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
58mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-700mV
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7314QTRPBFCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7314QTRPBF
Manufacturer:
IR
Quantity:
20 000
6
0.080
0.070
0.060
0.050
0.040
0.030
Fig 13a. Basic Gate Charge Waveform
Fig 11. Typical On-Resistance Vs.
Fig 13b. Gate Charge Test Circuit
2.0
12V
V
G
V
GS
Same Type as D.U.T.
Q
Current Regulator
-V GS, Gate -to -Source Voltage (V)
GS
.2µF
Gate Voltage
50KΩ
3mA
Current Sampling Resistors
4.0
Charge
.3µF
Q
Q
GD
G
I
G
I D = -5.2A
D.U.T.
I
D
6.0
+
-
V
DS
8.0
0.430
0.330
0.230
0.130
0.030
1600
1200
800
400
0
25
Fig 14. Maximum Avalanche Energy
Fig 12. Typical On-Resistance Vs.
0
Starting Tj, Junction Temperature
50
10
Vs. Drain Current
Drain Current
-I D , Drain Current ( A )
75
VGS = -2.7V
20
100
VGS = -4.5V
30
TOP
BOTTOM
125
www.irf.com
( C)
°
40
150
-2.1A
-4.4A
-5.2A
I D
50
175