SI3850ADV-T1-E3 Vishay, SI3850ADV-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI3850ADV-T1-E3
• Description: MOSFET N/P-CH 20V 1.4/.96A 6TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3850ADV-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.4A, 960mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 4.5V
• Power - Max: 1.08W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.4 A @ N Channel or 0.96 A @ P Channel
• Power Dissipation: 1080 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 240mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3850ADV-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 73789
S-60470-Rev. A, 27-Mar-06
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
8
6
4
2
0
0.0
0.0
0.0
I
D
= 1 A
0.5
On-Resistance vs. Drain Current
V
0.7
0.5
GS
V
DS
V
Output Characteristics
Q
= 2.5 V
DS
1.0
g
– Drain-to-Source Voltage (V)
= 10 V
I
– Total Gate Charge (nC)
D
Gate Charge
– Drain Current (A)
1.4
1.0
V
1.5
V
DS
GS
= 5 V
V
= 5.0 thru 4 V
GS
2.0
V
3 V
2.1
1.5
= 3 V
GS
V
= 15 V
GS
2.5 V
2.5
= 4.5 V
2.8
2.0
3.0
2 V
3.5
2.5
3.5
110
1.8
1.6
1.4
1.2
1.0
0.8
0.6
3.0
2.4
1.8
1.2
0.6
0.0
88
66
44
22
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
C
I
D
rss
= 1.2 A
V
4
V
DS
T
GS
Transfer Characteristics
0
J
1
– Junction Temperature (°C)
C
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
oss
25
Capacitance
8
25 °C
50
C
Vishay Siliconix
2
iss
- 55 °C
Si3850ADV
12
75
V
GS
www.vishay.com
100
= 3 V
T
3
V
C
GS
16
= 125 °C
= 4.5 V
125
150
20
4
3