SI3850ADV-T1-GE3 Vishay, SI3850ADV-T1-GE3 Datasheet
SI3850ADV-T1-GE3
Specifications of SI3850ADV-T1-GE3
Related parts for SI3850ADV-T1-GE3
SI3850ADV-T1-GE3 Summary of contents
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... Ordering Information: Si3850ADV-T1-E3 (Lead (Pb)-free) Si3850ADV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation (Surface Mounted on FR4 Board) Operating Junction and Storage Temperature Range ...
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... Si3850ADV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static V Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b R Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...
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... Q - Total Gate Charge (nC) g Gate Charge Document Number: 73789 S09-2110-Rev. B, 12-Oct- 2.1 2 2.0 2.5 3.0 3 1.5 2.0 2.5 Si3850ADV Vishay Siliconix 3 °C 2.4 25 °C 1 1.2 0.6 0 Gate-to-Source Voltage (V) GS Transfer Characteristics 110 88 C iss 66 C oss 44 ...
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... Si3850ADV Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 150 °C 1 0.1 0.01 0.001 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.2 0.1 - 0.0 - 0.1 - 0.2 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 25 °C 0.9 1.2 1 250 µA ...
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... N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 73789 S09-2110-Rev. B, 12-Oct- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si3850ADV Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 100 °C/W thJA ( ...
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... Si3850ADV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1 Drain-to-Source Voltage (V) DS Output Characteristics 2 1.5 1.0 0.5 0.0 0.0 0.5 1 Drain Current (A) D On-Resistance vs. Drain Current 0.0 0.5 1.0 ...
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... Limited DS(on °C A Single Pulse BVDSS Limited 0. Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area Si3850ADV Vishay Siliconix 3.0 2.4 1.8 125 °C 1.2 25 °C 0.6 0 Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0.1 ...
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... Si3850ADV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...