SI3850ADV-T1-GE3 Vishay, SI3850ADV-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI3850ADV-T1-GE3
• Description: MOSFET N/P-CH 20V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3850ADV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.4A, 960mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 4.5V
• Power - Max: 1.08W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 20V
• Threshold Voltage Vgs Typ: 1.5V
• Power Dissipation Pd: 1.08W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3850ADV-T1-GE3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73789
S09-2110-Rev. B, 12-Oct-09
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
8
6
4
2
0
0.0
0.0
0.0
I
D
= 1 A
0.5
On-Resistance vs. Drain Current
0.5
0.7
V
V
GS
DS
Output Characteristics
Q
V
1.0
= 2.5 V
g
DS
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
I
D
= 10 V
Gate Charge
- Drain Current (A)
1.0
1.4
V
1.5
V
GS
DS
3 V
V
2.5 V
= 5.0 V thru 4 V
= 5 V
GS
V
2.0
GS
= 15 V
1.5
2.1
= 3 V
V
GS
2.5
2 V
= 4.5 V
2.0
2.8
3.0
2.5
3.5
3.5
110
3.0
2.4
1.8
1.2
0.6
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
88
66
44
22
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
C
I
D
rss
= 1.2 A
4
V
V
C
DS
1
Transfer Characteristics
0
T
GS
oss
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
8
C
25 °C
50
2
iss
Vishay Siliconix
- 55 °C
Si3850ADV
12
75
V
GS
T
www.vishay.com
100
C
= 3 V
3
V
= 125 °C
16
GS
= 4.5 V
125
150
20
4
3