SI3850ADV-T1-GE3 Vishay, SI3850ADV-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI3850ADV-T1-GE3
• Description: MOSFET N/P-CH 20V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3850ADV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.4A, 960mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 4.5V
• Power - Max: 1.08W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 20V
• Threshold Voltage Vgs Typ: 1.5V
• Power Dissipation Pd: 1.08W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3850ADV-T1-GE3TR

Si3850ADV
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
0.0
10
8
6
4
2
0
0.0
0.0
0.0
I
D
= 1 A
V
GS
0.5
On-Resistance vs. Drain Current
= 2.5 V
0.5
0.5
V
DS
Output Characteristics
Q
V
g
- Drain-to-Source Voltage (V)
DS
1.0
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
= 10 V
1.0
1.0
V
1.5
DS
= 5 V
V
1.5
GS
1.5
V
GS
= 15 V
2.0
V
3.5 V
3 V
2.5 V
GS
= 3 V
V
= 5 V thru 4 V
GS
2 V
2.0
2.0
= 4.5 V
2.5
2.5
3.0
2.5
110
1.8
1.6
1.4
1.2
1.0
0.8
0.6
2.0
1.6
1.2
0.8
0.4
0.0
88
66
44
22
0
- 50
0
0
I
On-Resistance vs. Junction Temperature
D
- 25
= 0.5 A
4
1
V
V
Transfer Characteristics
0
T
GS
DS
C
J
C
C
oss
- Junction Temperature (°C)
rss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
iss
25
Capacitance
8
2
25 °C
- 55 °C
S09-2110-Rev. B, 12-Oct-09
50
Document Number: 73789
12
3
75
V
T
GS
C
100
= 125 °C
= 3 V
V
16
4
GS
125
= 4.5 V
150
20
5