SI3850ADV-T1-GE3 Vishay, SI3850ADV-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI3850ADV-T1-GE3
• Description: MOSFET N/P-CH 20V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3850ADV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.4A, 960mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 4.5V
• Power - Max: 1.08W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 20V
• Threshold Voltage Vgs Typ: 1.5V
• Power Dissipation Pd: 1.08W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3850ADV-T1-GE3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73789
S09-2110-Rev. B, 12-Oct-09
0.01
0.1
1
10
-4
0.05
0.2
0.1
0.02
Duty Cycle = 0.5
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-2
Square Wave Pulse Duration (s)
10
-1
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
Vishay Siliconix
t
2
DM
100
Si3850ADV
Z
thJA
thJA
t
t
1
2
(t)
= 100 °C/W
www.vishay.com
1000
5