SI3850ADV-T1-GE3 Vishay, SI3850ADV-T1-GE3 Datasheet - Page 7

• Manufacturer Part Number: SI3850ADV-T1-GE3
• Description: MOSFET N/P-CH 20V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3850ADV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.4A, 960mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 4.5V
• Power - Max: 1.08W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 20V
• Threshold Voltage Vgs Typ: 1.5V
• Power Dissipation Pd: 1.08W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3850ADV-T1-GE3TR

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73789
S09-2110-Rev. B, 12-Oct-09
0.001
- 0.1
- 0.2
0.01
0.4
0.3
0.2
0.1
0.0
10
0.1
- 50
1
0.0
Source-Drain Diode Forward Voltage
- 25
0.4
V
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
T
= 150 °C
J
25
- Temperature (°C)
0.8
25 °C
50
1.2
75
I
D
0.01
= 250 µA
0.1
10
1
100
0.1
1.6
I
* V
D
Limited by R
= 5 mA
GS
125
Single Pulse
T
A
> minimum V
= 25 °C
V
DS
150
2.0
- Drain-to-Source Voltage (V)
DS(on)
Safe Operating Area
1
*
BVDSS Limited
GS
at which R
10
DS(on)
3.0
2.4
1.8
1.2
0.6
0.0
24
18
12
30
0.001
6
0
0
is specified
1 ms
10 ms
100 ms
1 s, 10 s
DC
Single Pulse Power vs. Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
100
1
0.01
V
GS
- Gate-to-Source Voltage (V)
2
Time (s)
0.1
25 °C
Vishay Siliconix
Si3850ADV
3
125 °C
www.vishay.com
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