SI3850ADV-T1-E3 Vishay, SI3850ADV-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI3850ADV-T1-E3
• Description: MOSFET N/P-CH 20V 1.4/.96A 6TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3850ADV-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.4A, 960mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 4.5V
• Power - Max: 1.08W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.4 A @ N Channel or 0.96 A @ P Channel
• Power Dissipation: 1080 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 240mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3850ADV-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 73789
S-60470-Rev. A, 27-Mar-06
0.01
0.1
1
10
-4
0.05
Duty Cycle = 0.5
0.1
0.02
0.2
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-2
Square Wave Pulse Duration (sec)
10
-1
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
– T
t
A
1
= P
Vishay Siliconix
t
2
DM
Si3850ADV
Z
thJA
100
thJA
t
t
1
2
(t)
= 100 °C/W
www.vishay.com
1000
5