SI7501DN-T1-GE3 Vishay, SI7501DN-T1-GE3 Datasheet
SI7501DN-T1-GE3
Specifications of SI7501DN-T1-GE3
Available stocks
Related parts for SI7501DN-T1-GE3
SI7501DN-T1-GE3 Summary of contents
Page 1
... Bottom View Ordering Information: Si7501DN-T1-E3 (Lead (Pb)-free) Si7501DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
Page 2
... Si7501DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...
Page 3
... I - Drain Current (A) D On-Resistance vs. Drain Current 6 Total Gate Charge (nC) g Gate Charge Document Number: 72173 S-81544-Rev. D, 07-Jul- thru Si7501DN Vishay Siliconix ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 1000 800 C iss 600 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 1.6 ...
Page 4
... Si7501DN Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0 250 µA D 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 1.4 75 100 125 150 ...
Page 5
... Single Pulse 0.05 0.02 0. Document Number: 72173 S-81544-Rev. D, 07-Jul- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7501DN Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA - ( ...
Page 6
... Si7501DN Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0.10 0. 0.04 0.02 0. Drain Current (A) D On-Resistance vs. Drain Current 7 Total Gate Charge (nC) g Gate Charge www.vishay.com 800 600 400 200 1.6 1.4 1.2 1 ...
Page 7
... Limited DS(on D(on) Limited °C A 0.1 Single Pulse BV Limited DSS 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area Si7501DN Vishay Siliconix 0.16 0. 0.04 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage Time (s) Single Pulse Power ...
Page 8
... Si7501DN Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
Page 9
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...