SI7501DN-T1-GE3 Vishay, SI7501DN-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7501DN-T1-GE3
• Description: MOSFET N/P-CH 30V PPAK 1212-8
• Manufacturer: Vishay

Specifications of SI7501DN-T1-GE3

• Package / Case: PowerPAK® 1212-8
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 7.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.4A, 4.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 30V
• Power Dissipation Pd: 1.6W
• Operating Temperature Range: -55°C To +150°C
• Termination Type: SMD
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7501DN-T1-GE3TR

Si7501DN
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
30
10
1
0.0
- 50
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
0.4
- Source-to-Drain Voltage (V)
T
Threshold Voltage
J
T
J
= 150 °C
25
- Temperature (°C)
0.6
I
D
50
= 250 µA
0.8
75
1.0
0.01
100
0.1
100
10
T
1
0.1
J
= 25 °C
* V
Limited by R
1.2
125
GS
Limited
I
D(on)
Single Pulse
T
> minimum V
A
1.4
150
= 25 °C
V
DS(on)
Safe Operating Area
DS
1
- Drain-to-Source Voltage
*
GS
at which R
BV
DSS
Limited
DS(on)
10
0.16
0.12
0.08
0.04
0.00
50
40
30
20
10
0
10
is specified
I
DM
0
- 3
On-Resistance vs. Gate-to-Source Voltage
Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
10
-2
I
2
100
D
V
= 6.4 A
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
10
-1
4
Time (s)
S-81544-Rev. D, 07-Jul-08
Document Number: 72173
1
6
10
8
100
600
10