SI7501DN-T1-GE3 Vishay, SI7501DN-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7501DN-T1-GE3
• Description: MOSFET N/P-CH 30V PPAK 1212-8
• Manufacturer: Vishay

Specifications of SI7501DN-T1-GE3

• Package / Case: PowerPAK® 1212-8
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 7.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.4A, 4.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 30V
• Power Dissipation Pd: 1.6W
• Operating Temperature Range: -55°C To +150°C
• Termination Type: SMD
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7501DN-T1-GE3TR

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72173
S-81544-Rev. D, 07-Jul-08
0.16
0.12
0.08
0.04
0.00
25
20
15
10
10
5
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 6.4 A
On-Resistance vs. Drain Current
= 15 V
5
1
3
V
DS
Output Characteristics
Q
V
GS
- Drain-to-Source Voltage (V)
g
I
D
- Total Gate Charge (nC)
- Drain Current (A)
= 6 V
Gate Charge
10
2
6
V
GS
= 10 thru 6 V
15
3
9
5 V
V
GS
20
12
4
= 10 V
4 V
3 V
25
15
5
1000
1.6
1.4
1.2
1.0
0.8
0.6
800
600
400
200
25
20
15
10
0
- 50
5
0
0
0
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
C
= 6.4 A
rss
= 10 V
1
6
V
V
Transfer Characteristics
T
0
GS
J
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
2
25
Capacitance
12
C
iss
50
C
Vishay Siliconix
3
oss
T
25 °C
18
75
C
Si7501DN
= - 55 °C
4
www.vishay.com
100
24
125 °C
125
5
150
30
6
3