2N7002PS,115 NXP Semiconductors, 2N7002PS,115 Datasheet - Page 11

MOSFET N-CH DUAL 60V SOT-363

2N7002PS,115

Manufacturer Part Number
2N7002PS,115
Description
MOSFET N-CH DUAL 60V SOT-363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 2N7002PS,115

Package / Case
SC-70-6, SC-88, SOT-363
Mounting Type
Surface Mount
Power - Max
300mW
Fet Type
2 N-Channel (Dual)
Current - Continuous Drain (id) @ 25° C
300mA
Drain To Source Voltage (vdss)
60V
Fet Feature
Standard
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
1.6 Ohm @ 10 V
Gate Charge Qg
0.6 nC
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.32 A
Power Dissipation
320 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Vgs(th) (max) @ Id
-
Rds On (max) @ Id, Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934064134115
NXP Semiconductors
9. Package outline
Fig 18. Package outline SOT363 (SC-88)
2N7002PS
Product data sheet
Plastic surface-mounted package; 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT363
1.1
0.8
A
max
0.1
A 1
6
1
0.30
0.20
b p
y
IEC
pin 1
index
e 1
0.25
0.10
c
D
e
2
5
2.2
1.8
b p
D
All information provided in this document is subject to legal disclaimers.
JEDEC
1.35
1.15
E
4
3
REFERENCES
0
1.3
e
Rev. 1 — 1 July 2010
w
B
M
B
0.65
e
1
SC-88
JEITA
scale
1
H E
2.2
2.0
A
0.45
0.15
L p
A 1
2 mm
60 V, 320 mA N-channel Trench MOSFET
0.25
0.15
Q
H E
E
0.2
v
detail X
PROJECTION
0.2
EUROPEAN
w
L p
Q
0.1
y
A
c
2N7002PS
© NXP B.V. 2010. All rights reserved.
X
v
ISSUE DATE
M
04-11-08
06-03-16
A
SOT363
11 of 16

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