2N7002PV,115 NXP Semiconductors, 2N7002PV,115 Datasheet - Page 9

• Manufacturer Part Number: 2N7002PV,115
• Description: MOSFET N-CH DUAL 60V SOT-666
• Manufacturer: NXP Semiconductors

Specifications of 2N7002PV,115

• Package / Case: SS Mini-6 (SOT-666)
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Fet Type: 2 N-Channel (Dual)
• Current - Continuous Drain (id) @ 25° C: 300mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Standard
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -
• Rds On (max) @ Id, Vgs: -

NXP Semiconductors
2N7002PV
Product data sheet
Fig 14. Per transistor: Gate-source voltage as a
Fig 16. Per transistor: Source current as a function of source-drain voltage; typical values
V
(V)
(1) T
(2) T
GS
5.0
4.0
3.0
2.0
1.0
0.0
0.0
I
function of gate charge; typical values
V
D
amb
amb
GS
= 300 mA; V
= 0 V
= 150 °C
= 25 °C
0.2
DS
= 30 V; T
0.4
amb
(A)
I
S
= 25 °C
1.2
0.8
0.4
0.0
0.6
0.0
All information provided in this document is subject to legal disclaimers.
Q
017aaa025
G
(nC)
0.8
Rev. 1 — 5 August 2010
0.4
Fig 15. Per transistor: Gate charge waveform
(1)
0.8
V
definitions
(2)
V
SD
V
V
V
GS(pl)
017aaa026
DS
GS(th)
GS
60 V, 350 mA N-channel Trench MOSFET
(V)
1.2
Q
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
2N7002PV
© NXP B.V. 2010. All rights reserved.
003aaa508
9 of 16