STS1DNC45 STMicroelectronics, STS1DNC45 Datasheet
STS1DNC45
Specifications of STS1DNC45
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STS1DNC45 Summary of contents
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... DUAL N-CHANNEL 450V - 4.1 - 0.4A SO-8 SuperMESH™ POWER MOSFET I D 0.4 A Parameter = 25° 100° 25°C Dual Operation C = 25°C Single Operation C (1)I SD STS1DNC45 SO-8 INTERNAL SCHEMATIC DIAGRAM Value 450 450 ± 30 0.40 0.25 1.6 1 0.4 A, di/dt 100A/µ (BR)DSS Unit V ...
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... STS1DNC45 THERMAL DATA Rthj-amb(#) Thermal Resistance Junction-ambient Max Single Operation Thermal Resistance Junction-ambient Max Dual Operation T Max. Operating Junction Temperature j T Storage Temperature stg (#) When Mounted on FR4 board (Steady State) AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy ...
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... Test Conditions V = 360 1 4 (see test circuit, Figure 5) Test Conditions 0.4 A, di/dt = 100A/µ 100 150° (see test circuit, Figure 5) Thermal Impedance STS1DNC45 Min. Typ. Max. Unit 6 1.3 nC 3.2 Min. Typ. Max. Unit 8 Min. Typ. Max. Unit 0 ...
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... STS1DNC45 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
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... Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics Max Id Current vs Tc Normalized On Resistance vs Temperature Normalized BVDSS vs Temperature Maximum Avalanche Energy vs Temperature STS1DNC45 5/8 ...
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... STS1DNC45 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... STS1DNC45 MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0.196 0.244 0.157 0.050 0.023 0016023 7/8 ...
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... STS1DNC45 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...