FMM22-05PF IXYS, FMM22-05PF Datasheet - Page 2
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FMM22-05PF
Manufacturer Part Number
FMM22-05PF
Description
MOSFET MOD N-CH 500V 13A I4-PAK
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.FMM22-05PF.pdf
(2 pages)
Specifications of FMM22-05PF
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
2630pF @ 25V
Power - Max
132W
Mounting Type
Through Hole
Package / Case
i4-PAC™
Vdss, Max, (v)
500
Id25, Tc = 25°c, (a)
13
Rds(on), Max, Tj = 25°c, (ohms)
270
Ciss, Typ, (pf)
-
Qg, Typ, (nc)
-
Tf, Typ, (ns)
21
Tr, Typ, (ns)
25
Rthjc, Max, (c/w)
0.95
Package Style
ISOPLUS i4-Pak
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
(T
BV
V
I
I
R
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
I
Q
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
GSS
DSS
S
SM
RM
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(on)
iss
oss
rss
thJC
thCS
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
g(on)
gs
gd
RM
J
DSS
= 25°C unless otherwise specified)
I
V
V
V
V
V
V
V
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, pulse width limited by T
I
Test Conditions
F
F
R
GS
DS
GS
DS
GS
GS
DS
GS
GS
GS
GS
G
= 22A, -di/dt = 100A/μs
= 22A, V
= 100V, V
= 10Ω (External)
= 10V, V
= 0V
= 20V, I
= 0V, V
= 10V, V
= 0V
= 0V, I
= V
= ±30 V, V
= V
= 10V, I
ADVANCE TECHNICAL INFORMATION
GS
DSS
, I
GS
D
DS
D
D
DS
D
= 250μA
DS
GS
= 1mA
= 0V, Note 1
= 11A, Note 1
= 11A, Note 1
= 25V, f = 1MHz
= 0.5 V
DS
= 0.5 V
= 0V
4,835,592
4,881,106
3
2
= 0V
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
T
= 11A
= 22A
J
= 125°C
T
J
5,049,961
5,063,307
5,187,117
= 25°C unless otherwise specified)
JM
Min.
5,237,481
5,381,025
5,486,715
500
3.0
Characteristic Values
Min.
Characteristic Values
Typ.
7.0
0.7
6,162,665
6,259,123 B1
6,306,728 B1
2630
310
0.15
Typ.
25
72
21
50
16
18
20
27
22
Max.
200
1.5
13
55
± 100
0.95 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
250 μA
270 mΩ
5.0
5 μA
°C/W
μC
nC
nC
nC
pF
nA
pF
pF
ns
ns
ns
ns
ns
A
A
V
A
V
V
S
6,683,344
6,710,405 B2 6,759,692
6,710,463
ISOPLUS i4-Pak
6,727,585
6,771,478 B2 7,071,537
FMM22-05PF
7,005,734 B2
7,063,975 B2
TM
Outline
Ref: IXYS CO 0077 R0
7,157,338B2