GWM120-0075P3-SL SAM IXYS, GWM120-0075P3-SL SAM Datasheet

GWM120-0075P3-SL SAM

Manufacturer Part Number

GWM120-0075P3-SL SAM

Description

IC FULL BRIDGE 3PH ISOPLUS STRT

Manufacturer

IXYS

Datasheet

1.GWM120-0075P3-SL.pdf (6 pages)

Specifications of GWM120-0075P3-SL SAM

Fet Type

6 N-Channel (3-Phase Bridge)

Fet Feature

Standard

Rds On (max) @ Id, Vgs

5.5 mOhm @ 60A, 10V

Drain To Source Voltage (vdss)

75V

Current - Continuous Drain (id) @ 25° C

118A

Vgs(th) (max) @ Id

4V @ 1mA

Gate Charge (qg) @ Vgs

100nC @ 10V

Mounting Type

Surface Mount

Package / Case

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Power - Max

Current page: 1 of 6
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Three phase full Bridge

with Trench MOSFETs

in DCB isolated high current package

IXYS reserves the right to change limits, test conditions and dimensions.

MOSFETs

Symbol

DSS

GSS

D25

D90

F25

F90

d(on)

d(off)

GS(th)

off

recoff

DSS

DSon

thJC

thJH

Conditions

on chip level at

inductive load

with heat transfer paste (IXYS test setup)

= 80 A; R

= 25°C

= 90°C

= 25°C (diode)

= 90°C (diode)

= 25°C to 150°C

= V

= 10 V ; I

= 20 V; I

= ± 20 V; V

= 10 V; V

DSS

; V

= 39 Ω

= 60 A

= 1 mA

= 0 V

= 55 V; I

= 30 V

= 0 V

= 125 A

= 25°C

= 125°C

= 25°C

= 125°C

= 25°C, unless otherwise specified)

min.

Characteristic Values

Maximum Ratings

0.12

0.40

0.02

typ.

100

510

100

3.7

8.4

0.1

1.3

max.

± 20

118

120

5.5

0.2

1.0

1.6

K/W

µA

L+

L-

Applications

AC drives

• in automobiles

• in industrial vehicles

• in battery supplied equipment

Features

• MOSFETs in trench technology:

• package:

• Space and weight savings

Package options

• 3 lead forms available

D25

- electric power steering

- starter generator

- propulsion drives

- fork lift drives

- low RDSon

- optimized intrinsic reverse diode

- high level of integration

- high current capability 300 A max.

- aux. terminals for MOSFET control

- terminals for soldering or welding

- isolated DCB ceramic base plate

- straight leads (SL)

- SMD lead version (SMD)

- bent leads (BL)

DSS

DSon typ.

connections

with optimized heat transfer

Bent leads

GWM 120-0075P3

= 3.7 mW

= 75 V

= 118 A

Straight leads

Surface Mount

Device

20081126f

1 - 6

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GWM120-0075P3-SL SAM Summary of contents

Page 1

... inductive load off E recoff R thJC R with heat transfer paste (IXYS test setup) thJH IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved Maximum Ratings ± 20 Characteristic Values (T = 25°C, unless otherwise specified) VJ min ...

Page 2

... C coupling capacity between shorted P pins and mounting tab in the case Weight typ. IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. ...

Page 3

... S6 Part Name & Leads Ordering Packing Unit Marking Straight Standard GWM 120-0075P3 - SL SMD Standard GWM 120-0075P3 - SMD Bent Standard GWM 120-0075P3 - BL IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved Part Marking GWM 120-0075P3 ...

Page 4

... A D 2.0 1.5 1.0 R normalized DS(on) 0.5 - [°C] J Fig. 5 Drain source on-state resistance R versus junction temperature T IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 100 125 150 DSS 25° 12.0 10.5 9 ...

Page 5

... J 0.45 0.30 0. rec(off) 0. [Ω] G Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 160 140 120 100 100 120 0.8 125 0 100 0 ...

Page 6

... Fig. 15 Reverse recovery charge Q of the body diode vs. di d(on) r Fig. 17 Definition of switching times IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 80A 125 1200 1400 1600 rr 125 A 80A 40 A 1200 1600 ...

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