GWM220-004P3-SL SAM IXYS, GWM220-004P3-SL SAM Datasheet - Page 2

• Manufacturer Part Number: GWM220-004P3-SL SAM
• Description: IC FULL BRIDGE 3PH ISOPLUS STRT
• Manufacturer: IXYS

Specifications of GWM220-004P3-SL SAM

• Fet Type: 6 N-Channel (3-Phase Bridge)
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 94nC @ 10V
• Mounting Type: Surface Mount
• Package / Case: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Rds On (max) @ Id, Vgs: -

IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
Source-Drain Diode
Symbol
V
t
Q
I
Component
Symbol
I
T
T
V
F
Symbol
R
C
Weight
RM
rr
RMS
SD
VJ
stg
C
RM
ISOL
pin to chip
P
Conditions
(diode) I
I
Conditions
per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
I
mounting force with clip
Conditions
with heatsink compound
coupling capacity between shorted
pins and mounting tab in the case
typ.
F
ISOL
= 20 A; -di
< 1 mA, 50/60 Hz, f = 1 minute
F
= 110 A; V
F
/dt = 100 A/µs; V
GS
= 0 V
R
(T
= 20 V
J
= 25°C, unless otherwise specified)
min.
min.
Characteristic Values
Characteristic Values
Maximum Ratings
typ.
typ.
160
1.0
tbd
tbd
0.6
70
25
-55...+175
-55...+125
50 - 250
max.
1000
max.
300
1.6
mW
µC
V~
pF
°C
°C
ns
N
V
A
A
g
Thermal Response
junction - case (typ.)
Equivalent Circuits for Simulation
T
P
J
V
C
C
GWM 220-004P3
th1
th2
= tbd J/K; R
= tbd J/K; R
C
th1
R
th1
th1
th2
= tbd K/W
= tbd K/W
C
th2
R
th2
20081126f
T
2 - 3
C