VWM350-0075P IXYS, VWM350-0075P Datasheet
VWM350-0075P
Manufacturer Part Number
VWM350-0075P
Description
MODULE VWM 6PACK 340A 75V V2
Manufacturer
IXYS
Datasheet
1.VWM350-0075P.pdf
(2 pages)
Specifications of VWM350-0075P
Fet Type
6 N-Channel (3-Phase Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.3 mOhm @ 250A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
340A
Vgs(th) (max) @ Id
4V @ 2mA
Gate Charge (qg) @ Vgs
450nC @ 10V
Mounting Type
Through Hole
Package / Case
V2-PAK
Vdss, Max, (v)
75
Id25, Tc = 25°c, (a)
340
Id80, Tc = 80°c, (a)
250
Id90, Tc = 90°c, (a)
-
Rds(on), Max, Tj = 25°c, (mohms)
2.3
Tf, Typ, (ns)
200
Tr, Typ, (ns)
170
Rthjc, Max, (ºc/w)
0.26
Package Style
V2-Pack
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Three phase full bridge
with Trench MOSFETs
Preliminary data
Symbol
V
V
I
I
I
I
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
V
t
R
R
Ratings and characteristic values are per individual MOSFET
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
MOSFETs T1 - T6
D25
D80
D25
D80
DSS
GSS
d(off)
d(on)
r
f
rr
DSS
GS
GSth
F
DSon
g
gd
thJC
thJH
gs
Conditions
T
T
T
T
T
Conditions
V
V
V
V
(diode) I
(diode) I
with heat transfer paste
VJ
C
C
C
C
GS
DS
DS
GS
D-68623 Lampertheim
= 25°C
= 80°C
= 25°C (diode)
= 80°C (diode)
= 25°C to 150°C
= 10 V; I
= 20 V; I
= 75V; V
= ±20 V; V
V
V
I
D
GS
GS
= 175 A; R
= 10 V; V
= 10 V; V
F
F
= 175 A; V
= 40 A; -di/dt = 200 A/µs; V
D
D
GS
= I
= 2 mA
DS
= 0 V; T
D80
DS
DS
G
= 0 V
= 2.2 Ω
= 0.5 • V
= 0.5 • V
GS
T
= 0 V
G1
G2
S1
S2
L+
L-
VJ
VJ
= 25°C
= 125°C
T4
DSS
DSS
(T
T1
; I
;
VJ
D
= 175A
= 25°C, unless otherwise specified)
G3
S3
G4
S4
DS
= 30 V
T5
T2
min.
Characteristic Values
2
G5
G6
Maximum Ratings
S6
S5
0.25
0.51
450
170
170
320
200
typ.
2.3
1.1
60
60
90
T6
340
±20
250
340
250
75
T3
max.
0.02 mA
0.26 K/W
3.3 mΩ
0.2
1.6
4
K/W
mA
nC
nC
nC
µA
ns
ns
ns
ns
ns
V
V
A
A
A
A
L1
L2
L3
V
V
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
Applications
AC drives
• in automobiles
• in industrial vehicles
• in battery supplied equipment
Features
• MOSFETs in trench technology:
• package:
V
R
I
D25
- electric power steering
- starter generator
- etc...
- propulsion drives
- fork lift drives
- low R
- optimized intrinsic reverse diode
- high level of integration
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
DSS
DSon
with optimized heat transfer
DSon
VWM 350-0075P
= 75 V
= 2.3 mΩ Ω Ω Ω Ω
= 340 A
1 - 2
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VWM350-0075P Summary of contents
Page 1
... F R thJC R with heat transfer paste thJH Ratings and characteristic values are per individual MOSFET IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 L+ ...
Page 2
... ISOL M Mounting torque (M5) d Symbol Conditions Weight typ. Dimensions 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 Maximum Ratings -40...+175 -40...+125 500 ...