SI5517DU-T1-E3 Vishay, SI5517DU-T1-E3 Datasheet - Page 11

• Manufacturer Part Number: SI5517DU-T1-E3
• Description: MOSFET N/P-CH 20V CHIPFET PPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5517DU-T1-E3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.2A, 4.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 8V
• Input Capacitance (ciss) @ Vds: 520pF @ 10V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.039 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.2 A, - 4.6 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 10 ns, 55 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 65 ns, 35 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5517DU-T1-E3TR

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 73529
S-81449-Rev. B, 23-Jun-08
0.01
0.01
0.1
0.1
2
1
2
1
http://www.vishay.com/ppg?73529.
10
10
-4
-4
0.1
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
Single Pulse
0.02
10
-3
0.05
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-2
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
P
DM
-1
JM
- T
t
1
A
= P
Vishay Siliconix
t
2
DM
Z
thJA
100
thJA
Si5517DU
t
t
1
2
(t)
= 87 °C/W
www.vishay.com
600
1
11