SI5517DU-T1-E3 Vishay, SI5517DU-T1-E3 Datasheet - Page 12

• Manufacturer Part Number: SI5517DU-T1-E3
• Description: MOSFET N/P-CH 20V CHIPFET PPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5517DU-T1-E3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.2A, 4.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 8V
• Input Capacitance (ciss) @ Vds: 520pF @ 10V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.039 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.2 A, - 4.6 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 10 ns, 55 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 65 ns, 35 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5517DU-T1-E3TR

PowerPAK
Document Number: 73203
19-Jul-10
DIM.
D
D
A
E
E
K
C
D
H
A
b
E
e
K
L
2
3
1
2
3
1
®
ChipFET
E
2
H
b
D (8)
MIN.
0.70
0.25
0.15
2.92
1.75
0.20
1.82
1.38
0.45
0.15
0.25
0.30
0.30
D (1)
D (8)
0
®
Backside view of single pad
D (1)
SINGLE PAD
D (2)
D (7)
D
D (7) D (6)
D (2)
2
D
e
D (3)
MILLIMETERS
D (3)
D (6)
D
0.65 BSC
3
NOM.
0.75
0.30
0.20
3.00
1.87
0.25
1.90
1.50
0.50
0.20
0.35
Z
K
-
-
-
S (5)
G (4)
G (4)
S (5)
C
E
3
E
A
L
MAX.
0.85
0.05
0.35
0.25
3.08
2.00
0.30
1.98
1.63
0.55
0.25
0.40
-
-
K
1
0.028
0.010
0.006
0.115
0.069
0.008
0.072
0.054
0.018
0.006
0.010
0.012
0.012
MIN.
0
DETAIL Z
Package Information
0.026 BSC
INCHES
NOM.
0.030
0.012
0.008
0.118
0.074
0.010
0.075
0.059
0.020
0.008
0.014
-
-
-
Vishay Siliconix
A
1
www.vishay.com
MAX.
0.033
0.002
0.014
0.010
0.121
0.079
0.012
0.078
0.064
0.022
0.010
0.016
-
-
1