SI5517DU-T1-E3 Vishay, SI5517DU-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SI5517DU-T1-E3
• Description: MOSFET N/P-CH 20V CHIPFET PPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5517DU-T1-E3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.2A, 4.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 8V
• Input Capacitance (ciss) @ Vds: 520pF @ 10V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.039 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.2 A, - 4.6 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 10 ns, 55 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 65 ns, 35 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5517DU-T1-E3TR

Si5517DU
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.30
0.25
0.20
0.15
0.10
0.05
15
12
8
6
4
2
0
On-Resistance vs. Drain Current and Gate Voltage
9
6
3
0
0.0
0
0
V
GS
4.5 V
3.5 V
I
4 V
D
V
= 5 V
0.5
= 4.6 A
GS
3
V
= 1.8 V
3
DS
Q
Output Characteristics
V
g
- Drain-to-Source Voltage (V)
DS
1.0
- Total Gate Charge (nC)
I
D
= 10 V
Gate Charge
- Drain Current (A)
6
V
1.5
DS
6
3 V
= 16 V
9
2.5 V
2.0
V
GS
V
9
GS
= 2.5 V
12
= 4.5 V
2.5
1.5 V
2 V
1 V
12
3.0
15
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
800
600
400
200
5
4
3
2
1
0
- 50
0
0.0
0
I
V
On-Resistance vs. Junction Temperature
D
- 25
GS
C
= 3.3 A
rss
= 4.5 V
V
4
T
V
0.5
GS
0
Transfer Characteristics
J
DS
T
- Junction Temperature ( °C)
C
- Gate-to-Source Voltage (V)
T
= 25 °C
- Drain-to-Source Voltage (V)
C
25
= 125 °C
Capacitance
8
50
1.0
C
S-81449-Rev. B, 23-Jun-08
C
oss
Document Number: 73529
iss
12
75
T
C
100
= - 55 °C
1.5
16
125
150
2.0
20