IRF7106 International Rectifier, IRF7106 Datasheet - Page 3

• Manufacturer Part Number: IRF7106
• Description: HEX/MOS N/P-CH DL 20/-20V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7106

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A, 2.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 300pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics,
Fig 5. Typical Capacitance Vs.
800
600
400
200
100
100
0.1
10
10
0
1
0.01
Drain-to-Source Voltage
4
1
TOP
BOTTOM 4.5V
C
C
C
V
iss
V
oss
rss
V
5
DS
DS
GS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
V
C
C
C
0.1
T
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
J
6
= 0V,
= C
= C
= C
= 25
T = 25°C
J
gs
gd
ds
+ C
+ C
10
1
o
7
C
gd
gd
f = 1MHz
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
, C
4.5V
= 15V
8
ds
T = 150°C
J
10
SHORTED
9
100
100
10
A
A
A
N-Channel
71
Fig 2. Typical Output Characteristics,
Fig 4. Normalized On-Resistance
Fig 6. Typical Gate Charge Vs.
100
0.1
2.0
1.5
1.0
0.5
0.0
20
16
12
10
8
4
0
1
0.01
-60
0
Gate-to-Source Voltage
TOP
BOTTOM 4.5V
I
V
I
D
D
DS
-40
= 2.3A
= 3.0A
= 10V
Vs. Temperature
2
T , Junction Temperature (°C)
V
-20
J
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Q , Total Gate Charge (nC)
T
0.1
G
, Drain-to-Source Voltage (V)
J
0
4
= 150
20
6
40
1
o
60
C
8
20µs PULSE WIDTH
T = 150°C
FOR TEST CIRCUIT
J
SEE FIGURE 11
80
4.5V
IRF7106
10
100 120 140 160
10
V
GS
12
= 10V
100
14
A
A
A