IRF7106 International Rectifier, IRF7106 Datasheet - Page 7

• Manufacturer Part Number: IRF7106
• Description: HEX/MOS N/P-CH DL 20/-20V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7106

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A, 2.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 300pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Refer to the Appendix Section for the following:
Appendix A: Figure 24, Peak Diode Recovery dv/dt Test Circuit — See page 329.
Appendix B: Package Outline Mechanical Drawing — See page 332.
Appendix C: Part Marking Information — See page 332.
Appendix D: Tape and Reel Information — See page 336.
100
0.1
10
0.00001
1
D = 0.50
Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
0.0001
(THERMAL RESPONSE)
SINGLE PULSE
0.001
t , Rectangular Pulse Duration (sec)
1
0.01
N-P Channel
75
0.1
1
N o te s:
1 . D u ty fa c to r D = t / t
2 . P e a k T = P
J
10
D M
x Z
1
th J A
IRF7106
2
P
D M
+ T
100
A
t
1
t
2
1000
A