IRF7106 International Rectifier, IRF7106 Datasheet - Page 5

• Manufacturer Part Number: IRF7106
• Description: HEX/MOS N/P-CH DL 20/-20V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7106

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A, 2.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 300pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Fig 14. Typical Transfer Characteristics
Fig 12. Typical Output Characteristics,
Fig 16. Typical Capacitance Vs.
800
600
400
200
100
100
10
0.1
0
10
1
1
Drain-to-Source Voltage
1
0.1
4
TOP
BOTTOM - 4.5V
C
C
C
-V
iss
rss
oss
-V
-V
DS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
GS
DS
V
C
C
C
T
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
J
= 0V,
= C
= C
= C
= 25
6
1
gs
gd
ds
+ C
+ C
10
o
T = 25°C
C
gd
gd
J
f = 1MHz
-4.5V
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
, C
DS
J
= -15V
10
ds
8
T = 150°C
SHORTED
J
100
100
10
A
A
A
P-Channel
73
Fig 13. Typical Output Characteristics,
Fig 15. Normalized On-Resistance
Fig 17. Typical Gate Charge Vs.
100
0.1
2.0
1.5
1.0
0.5
0.0
20
16
12
10
8
4
0
1
-60
0.1
0
Gate-to-Source Voltage
TOP
BOTTOM - 4.5V
I
I
V
D
D
DS
-40
= -2.5A
= -2.3A
= -10V
Vs. Temperature
T , Junction Temperature (°C)
-V
-20
J
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
Q , Total Gate Charge (nC)
4
DS
T
G
J
0
, Drain-to-Source Voltage (V)
= 150
1
20
8
40
o
60
C
-4.5V
FOR TEST CIRCUIT
12
20µs PULSE WIDTH
T = 150°C
SEE FIGURE 22
J
80
10
IRF7106
100 120 140 160
V
GS
16
= -10V
20
100
A
A
A