IRF7106 International Rectifier, IRF7106 Datasheet - Page 4

• Manufacturer Part Number: IRF7106
• Description: HEX/MOS N/P-CH DL 20/-20V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7106

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A, 2.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 300pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7106
Fig 9. Maximum Drain Current Vs.
Fig 7. Typical Source-Drain Diode
Fig 11a. Gate Charge Test Circuit
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
10
1
25
0.4
Ambient Temperature
Forward Voltage
V
T , Ambient Temperature (°C)
SD
0.6
50
A
, Source-to-Drain Voltage (V)
T = 150°C
J
75
0.8
T = 25°C
100
J
1.0
125
1.2
V
GS
= 0V
150
1.4
A
A
N-Channel
72
Fig 8. Maximum Safe Operating Area
Fig 11b. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
100
0.1
10
1
0.1
T
T
Single Pulse
A
J
= 25°C
= 150°C
OPERATION IN THIS AREA LIMITED
V
DS
, Drain-to-Source Voltage (V)
1
BY R
DS(on)
10
100ms
1ms
10ms
100
A