IRF9910 International Rectifier, IRF9910 Datasheet

MOSFET 2N-CH 20V 10A 8-SOIC

IRF9910

Manufacturer Part Number
IRF9910
Description
MOSFET 2N-CH 20V 10A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF9910

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.4 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
10A, 12A
Vgs(th) (max) @ Id
2.55V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Input Capacitance (ciss) @ Vds
900pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS non-compliant
Other names
*IRF9910

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Applications
l
www.irf.com
Benefits
l
l
l
l
V
V
I
I
I
P
P
T
T
R
R
Notes  through
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJL
θJA
Dual SO-8 MOSFET for POL
converters in desktop, servers,
graphics cards, game consoles
and set-top box
@ T
@ T
and Current
@T
@T
Very Low R
Low Gate Charge
Fully Characterized Avalanche Voltage
20V V
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
GS
Max. Gate Rating
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
are on page 10
at 4.5V V
Parameter
Parameter
GS
fg
GS
GS
V
20V
@ 10V
@ 10V
DSS
Q1 13.4m @V
Q2 9.3m @V
Q1 Max.
R
Typ.
–––
–––
8.3
10
83
DS(on)
-55 to + 150
HEXFET
0.016
± 20
2.0
1.3
20
max
IRF9910
GS
GS
Q2 Max.
Max.
®
62.5
9.9
= 10V
12
98
20
= 10V
Power MOSFET
SO-8
Units
Units
W/°C
°C/W
10A
12A
04/28/04
°C
W
V
A
I
D
1

Related parts for IRF9910

IRF9910 Summary of contents

Page 1

... Notes  through are on page 10 … www.irf.com V R DSS DS(on) Q1 13.4m @V 20V Q2 9. Max. @ 10V 10V 8 Typ. ––– fg ––– IRF9910 ® HEXFET Power MOSFET I max D = 10V 10A GS = 10V 12A GS SO-8 Q2 Max. Units 20 V ± 9 2.0 W 1.3 0.016 W/° ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Q1 - Control FET 10000 TOP 1000 100 BOTTOM 10 1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 2.5V 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10000 TOP 1000 BOTTOM 100 ...

Page 4

Q1 - Control FET 10000 0V MHZ SHORTED iss rss oss ds gd 1000 C ...

Page 5

Q1 - Control FET 1 10A 10V GS 1.0 0.5 -60 -40 - 100120140160 Junction Temperature (°C) Fig 13. Normalized On-Resistance 100 T = 150° ...

Page 6

Q1 - Control FET 100 125 Ambient Temperature (°C) Fig 19. Maximum Drain Current vs. Ambient Temperature 2.5 2 250µA 1.5 1.0 -75 -50 ...

Page 7

D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 0.001 1E-006 1E-005 0.0001 Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 15V L DRIVER D.U.T + ...

Page 8

SD • Fig 30. Vds Vgs(th) Qgs1 Qgs2 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V Waveform DS ...

Page 9

SO-8 Package Details Dimensions are shown in millimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ...

Page 10

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...

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