IRF9910 International Rectifier, IRF9910 Datasheet - Page 8

• Manufacturer Part Number: IRF9910
• Description: MOSFET 2N-CH 20V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9910

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A, 12A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 900pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS non-compliant
• Other names: *IRF9910

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Fig 30.
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SD
Vgs(th)
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Qgs1 Qgs2
Vds
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G
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Fig 31. Gate Charge Waveform
HEXFET
+
Qgd
®
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Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
Qgodr
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
for N-Channel
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
Vgs
dv/dt
Forward Drop
di/dt
Id
D =
www.irf.com
Period
P.W.
V
V
I
SD
GS
DD
=10V