IRF9910 International Rectifier, IRF9910 Datasheet - Page 6

• Manufacturer Part Number: IRF9910
• Description: MOSFET 2N-CH 20V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9910

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A, 12A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 900pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS non-compliant
• Other names: *IRF9910

6
Fig 21. Threshold Voltage vs. Temperature
Fig 23. Maximum Avalanche Energy
Fig 19. Maximum Drain Current vs.
140
120
100
2.5
2.0
1.5
1.0
12
10
80
60
40
20
8
6
4
2
0
0
-75 -50 -25
25
25
Ambient Temperature
Starting T J , Junction Temperature (°C)
vs. Drain Current
Q1 - Control FET
T A , Ambient Temperature (°C)
50
50
T J , Temperature ( °C )
I D = 250µA
0
75
75
25 50 75 100 125 150
TOP
BOTTOM
100
100
I
2.2A
2.6A
8.3A
125
125
D
150
150
Typical Characteristics
Fig 22. Threshold Voltage vs. Temperature
Fig 24. Maximum Avalanche Energy
Fig 20. Maximum Drain Current vs.
120
100
2.5
2.0
1.5
1.0
80
60
40
20
14
12
10
8
6
4
2
0
0
-75 -50 -25
25
25
Q2 - Synchronous FET
Ambient Temperature
Starting T J , Junction Temperature (°C)
vs. Drain Current
T A , Ambient Temperature (°C)
50
50
T J , Temperature ( °C )
I D = 250µA
0
75
75
25 50 75 100 125 150
TOP
BOTTOM
100
100
125
125
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I
5.5A
6.2A
9.8A
D
150
150