IRF9910 International Rectifier, IRF9910 Datasheet - Page 4

• Manufacturer Part Number: IRF9910
• Description: MOSFET 2N-CH 20V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9910

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A, 12A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 900pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS non-compliant
• Other names: *IRF9910

Fig. 9. Gate-to-Source Voltage vs Typical Gate Charge
Fig 7. Typical Capacitance Vs.Drain-to-Source Voltage
4
10000
1000
1000
100
100
0.1
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
1
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
0
1
0 1 2 3 4 5 6 7 8 9 10
T
Tj = 150°C
Single Pulse
I
D
Q G Total Gate Charge (nC)
A
= 8.3A
= 25°C
C
C
C
Q1 - Control FET
oss
rss
iss
V GS = 0V,
C
C
C
rss
oss
iss
OPERATION IN THIS AREA LIMITED
BY R
1
= C
= C
= C
DS
V
V
gd
ds
(on)
gs
DS
DS
+ C
= 16V
= 10V
+ C
10
10
f = 1 MHZ
gd
gd
, C
100µsec
10msec
1msec
ds
100
SHORTED
1000
100
Typical Characteristics
Fig 8. Typical Capacitance Vs.Drain-to-Source Voltage
Fig. 10. Gate-to-Source Voltage vs Typical Gate Charge
100000
10000
1000
1000
100
100
0.1
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
1
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1
0
0
Q2 - Synchronous FET
T
Tj = 150°C
Single Pulse
I
D
Q G Total Gate Charge (nC)
A
= 9.8A
C
C
C
= 25°C
iss
rss
oss
V GS = 0V,
C
C
C
iss
rss
oss
OPERATION IN THIS AREA LIMITED
BY R
1
5
= C
= C
= C
DS
gd
ds
V
V
(on)
gs
DS
DS
+ C
+ C
= 16V
= 10V
10
10
10
f = 1 MHZ
gd
gd
, C
100µsec
10msec
1msec
ds
100
15
SHORTED
www.irf.com
1000
100
20