GWM120-0075P3 IXYS, GWM120-0075P3 Datasheet - Page 6

• Manufacturer Part Number: GWM120-0075P3
• Description: MOSFET MOD TRENCH ISOPLUS-DIL
• Manufacturer: IXYS

Specifications of GWM120-0075P3

• Fet Type: 6 N-Channel (3-Phase Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 118A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Mounting Type: Surface Mount
• Package / Case: ISOPLUS-DIL™
• Vdss, Max, (v): 75
• Id25, Tc = 25°c, (a): 125
• Id80, Tc = 80°c, (a): -
• Id90, Tc = 90°c, (a): 90
• Rds(on), Max, Tj = 25°c, (mohms): 5.5
• Tf, Typ, (ns): 100
• Tr, Typ, (ns): 80
• Rthjc, Max, (ºc/w): 1.0
• Package Style: ISOPLUS-DIL™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -

IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
80
75
70
65
60
55
50
400
400
Fig. 13 Reverse recovery time t
Fig. 15 Reverse recovery charge Q
Fig. 17
V
V
I
V
T
V
T
GS
D
DS
R
VJ
R
VJ
= 125°C
= 125°C
= 30 V
= 30 V
600
0,1 I
0,1 V
t
d(on)
D
GS
of the body diode vs. di/dt
of the body diode vs. di/dt
Definition of switching times
0,9 I
t
r
D
800
800
-di
-di
F
F
/dt [A/µs]
/dt [A/µs]
1000
1200
1200
40 A
40 A
rr
125 A
1400
0,9 V
rr
t
d(off)
125 A
GS
80A
80A
0,9 I
1600
1600
t
f
D
0,1 I
D
t
t
300
250
200
150
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
45
40
35
30
25
20
15
50
0
400
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
1
Fig. 14 Reverse recovery current I
Fig. 16 Source current I
Fig. 18 Typ. therm. impedance junction
V
T
T
R
VJ
J
= -25°C
= 125°C
= 30 V
125°C
150°C
25°C
to heatsink Z
source drain voltage V
of the body diode vs. di/dt
10
GWM 120-0075P3
800
-di
Time [ms]
V
F
/dt [A/µs]
SD
100
thJC
[V]
S
vs.
1200
SD
40 A
1000
(body diode)
GWM 120-0075P3
RM
125 A
80 A
20081126f
10000
1600
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