NTTD1P02R2 ON Semiconductor, NTTD1P02R2 Datasheet - Page 2

• Manufacturer Part Number: NTTD1P02R2
• Description: MOSFET P-CHAN DUAL 20V 8MICRO
• Manufacturer: ON Semiconductor

Specifications of NTTD1P02R2

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 1.45A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.45A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 265pF @ 16V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: 8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NTTD1P02R2OS

4. Handling precautions to protect against electrostatic discharge are mandatory.
5. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
6. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Notes 5 & 6)
BODY−DRAIN DIODE RATINGS (Note 5)
Drain−to−Source Breakdown Voltage
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate−Body Leakage Current
Gate Threshold Voltage
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Diode Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
GS
GS
GS
GS
DS
GS
GS
GS
= 0 Vdc, I
= 0 Vdc, V
= 0 Vdc, V
= −8 Vdc, V
= +8 Vdc, V
= V
= −4.5 Vdc, I
= −2.7 Vdc, I
= −2.5 Vdc, I
GS
, I
D
D
= −250 mAdc)
DS
DS
= −250 mAdc)
DS
DS
D
D
D
= −20 Vdc, T
= −20 Vdc, T
= −1.45 Adc)
= −0.7 Adc)
= −0.7 Adc)
= 0 Vdc)
= 0 Vdc)
DS
Characteristic
= −10 Vdc, I
J
J
= 25°C)
= 125°C)
(T
(V
(V
C
(V
(I
(I
(I
V
V
DD
S
S
S
= 25°C unless otherwise noted) (Note 4)
DD
GS
GS
D
DS
= −1.45 Adc, V
= −1.45 Adc, V
= −1.45 Adc, V
= −0.7 Adc)
= −16 Vdc, I
= −16 Vdc, I
= −16 Vdc, V
= −4.5 Vdc, R
= −4.5 Vdc, R
dI
V
(V
I
D
S
GS
f = 1.0 MHz)
T
DS
/dt = 100 A/ms)
= −1.45 Adc)
J
= −4.5 Vdc,
= 125°C)
= −16 Vdc,
http://onsemi.com
D
D
GS
GS
GS
GS
= −1.45 Adc,
G
= −0.7 Adc,
G
= 6.0 W)
= 6.0 W)
= 0 Vdc)
= 0 Vdc,
= 0 Vdc,
= 0 Vdc,
2
V
Symbol
R
V
(BR)DSS
t
t
t
t
I
I
I
C
Q
DS(on)
C
V
GS(th)
C
Q
Q
Q
g
d(on)
d(off)
d(on)
d(off)
DSS
GSS
GSS
t
t
t
FS
oss
t
t
t
t
SD
rss
RR
iss
rr
a
b
tot
gs
gd
r
f
r
f
−0.7
Min
−20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.95
0.130
0.175
0.190
−0.91
−0.72
0.015
Typ
−12
265
100
2.3
2.5
5.0
1.5
2.0
60
10
25
30
25
10
20
30
20
25
13
12
−
−
−
−
−
0.160
0.250
−100
Max
−1.0
−1.4
−1.1
−10
100
10
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
Mhos
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
nC
mC
pF
ns
ns
ns
W