NTTD1P02R2 ON Semiconductor, NTTD1P02R2 Datasheet - Page 5

• Manufacturer Part Number: NTTD1P02R2
• Description: MOSFET P-CHAN DUAL 20V 8MICRO
• Manufacturer: ON Semiconductor

Specifications of NTTD1P02R2

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 1.45A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.45A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 265pF @ 16V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: 8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NTTD1P02R2OS

1000
100
0.1
10
1
1.0E−05
0.02
0.05
0.01
D = 0.5
0.2
0.1
SINGLE PULSE
1.0E−04
1.0E−03
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 13. Thermal Response
1.0E−02
http://onsemi.com
t, TIME (s)
5
1.0E−01
P
(pk)
DUTY CYCLE, D = t
t
1
1.0E+00
t
2
1
/t
2
1.0E+01
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
(t) = r(t) R
− T
C
= P
1.0E+02
(pk)
qJC
1
R
qJC
(t)
1.0E+03