NTTD1P02R2 ON Semiconductor, NTTD1P02R2 Datasheet - Page 3

• Manufacturer Part Number: NTTD1P02R2
• Description: MOSFET P-CHAN DUAL 20V 8MICRO
• Manufacturer: ON Semiconductor

Specifications of NTTD1P02R2

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 1.45A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.45A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 265pF @ 16V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: 8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NTTD1P02R2OS

0.3
0.2
0.1
0.4
1.6
1.4
1.2
0.8
0.6
0
3
2
1
0
1
−50
0
0
−2.7 V
−2.9 V
−3.1 V
−3.3 V
−3.7 V
−4.5 V
−8 V
−V
I
V
−V
D
−25
GS
Figure 5. On−Resistance Variation with
GS,
0.25
= −1.45 A
Figure 1. On−Region Characteristics
DS
2
Figure 3. On−Resistance versus
= −4.5 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GATE−TO−SOURCE VOLTAGE (VOLTS)
T
J,
Gate−to−Source Voltage
0
JUNCTION TEMPERATURE (°C)
0.5
4
25
Temperature
−2.5 V
0.75
6
50
1
−2.3 V
75
V
GS
8
−2.1 V
−1.9 V
−1.7 V
1.25
= −1.5 V
I
T
D
J
100
= −1.45 A
= 25°C
10
T
J
1.5
125
http://onsemi.com
= 25°C
12
1.75
150
3
100
0.3
0.2
0.1
10
3
2
1
0
1
0
0
0
4
Figure 4. On−Resistance versus Drain Current
V
V
Figure 6. Drain−to−Source Leakage Current
GS
DS
T
−V
−V
J
0.5
= 25°C
= 0 V
≥ −10 V
0.5
GS
DS,
Figure 2. Transfer Characteristics
, GATE−TO−SOURCE VOLTAGE (VOLTS)
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
8
D,
1
T
T
1
T
J
J
J
DRAIN CURRENT (AMPS)
= 125°C
= 100°C
= 100°C
and Gate Voltage
versus Voltage
V
V
V
1.5
1.5
GS
GS
GS
= −2.5 V
= −2.7 V
= −4.5 V
12
T
2
2
J
= 25°C
2.5
2.5
16
T
J
= −55°C
3
3
3.5
20
3.5