NTJD4001NT1G ON Semiconductor, NTJD4001NT1G Datasheet

MOSFET 2N-CH 30V 250MA SOT-363

NTJD4001NT1G

Manufacturer Part Number
NTJD4001NT1G
Description
MOSFET 2N-CH 30V 250MA SOT-363
Manufacturer
ON Semiconductor
Type
Small Signalr
Datasheet

Specifications of NTJD4001NT1G

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 10mA, 4V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
250mA
Vgs(th) (max) @ Id
1.5V @ 100µA
Gate Charge (qg) @ Vgs
1.3nC @ 5V
Input Capacitance (ciss) @ Vds
33pF @ 5V
Power - Max
272mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.5 Ohm @ 4 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.25 A
Power Dissipation
272 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
1.5Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SC-88
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTJD4001NT1GOS
NTJD4001NT1GOS
NTJD4001NT1GOSTR

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NTJD4001N
Small Signal MOSFET
30 V, 250 mA, Dual N−Channel, SC−88
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using min pad size
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 5
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Low Gate Charge for Fast Switching
Small Footprint − 30% Smaller than TSOP−6
ESD Protected Gate
Pb−Free Package is Available
Low Side Load Switch
Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC
Buck Converters
Level Shifts
(Cu area = 0.155 in sq [1 oz] including traces).
Parameter
(T
Steady
Steady
State
State
J
= 25°C unless otherwise stated)
T
T
T
A
A
A
t =10 ms
= 25 °C
= 85 °C
= 25 °C
T
Symbol
J
V
V
, T
I
P
T
DSS
DM
I
I
GS
D
S
D
L
STG
−55 to
Value
±20
250
180
272
600
150
250
260
30
1
Units
mW
mA
mA
mA
°
°C
V
V
C
†For information on tape and reel specifications,
NTJD4001NT1
NTJD4001NT1G
NTJD4001NT2G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
(BR)DSS
30 V
CASE 419B
(Note: Microdot may be in either location)
Device
G
S
D
STYLE 26
SOT−363
1
1
2
ORDERING INFORMATION
1
TE
M
G
1
2
3
http://onsemi.com
SC−88 (6 LEADS)
1.0 W @ 4.0 V
1.5 W @ 2.5 V
R
DS(on)
(Pb−Free)
(Pb−Free)
SOT−363
SOT−363
SOT−363
SOT−363
Package
= Device Code
= Date Code
= Pb−Free Package
Top View
MARKING DIAGRAM &
PIN ASSIGNMENT
Publication Order Number:
6
1
TYP
D1 G2 S2
S1 G1 D2
TE M G
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
G
6
5
4
Shipping
NTJD4001N/D
250 mA
I
D
Max
D
G
S
2
1
2

Related parts for NTJD4001NT1G

NTJD4001NT1G Summary of contents

Page 1

... S CASE 419B 260 ° (Note: Microdot may be in either location) Device NTJD4001NT1 NTJD4001NT1G NTJD4001NT2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R TYP I ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage V Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND ...

Page 3

TYPICAL PERFORMANCE CURVES 0.16 2.5 V 0.14 0.12 0.1 0.08 0.06 0.04 0. 0.4 0.8 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure ...

Page 4

TYPICAL PERFORMANCE CURVES iss C 30 rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance ...

Page 5

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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