NTJD4001NT1G ON Semiconductor, NTJD4001NT1G Datasheet - Page 3

• Manufacturer Part Number: NTJD4001NT1G
• Description: MOSFET 2N-CH 30V 250MA SOT-363
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTJD4001NT1G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 250mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 1.3nC @ 5V
• Input Capacitance (ciss) @ Vds: 33pF @ 5V
• Power - Max: 272mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohm @ 4 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.25 A
• Power Dissipation: 272 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 1.5Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTJD4001NT1GOS; NTJD4001NT1GOS; NTJD4001NT1GOSTR

0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
1.25
0.75
0.25
1.0
0.5
0.2
0.1
0.005
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
0
0
−50
Figure 3. On−Resistance vs. Drain Current and
2
1
0
V
GS
I
V
D
GS
V
= 0.01 A
DS
= 10 V
−25
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
= 10 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.4
0.055
T
I
J
D,
, JUNCTION TEMPERATURE (°C)
2.5 V
0
V
DRAIN CURRENT (AMPS)
GS
TYPICAL PERFORMANCE CURVES
Temperature
= 2.75 V
V
0.8
25
GS
Temperature
T
T
T
= 10 V to 3 V
J
J
J
0.105
= 125°C
= 25°C
= −55°C
50
1.2
75
0.155
100
1.6
T
J
= 25°C
http://onsemi.com
2.25 V
1.75 V
125
1.5 V
2 V
0.205
2
150
3
10000
1000
0.08
0.06
0.04
0.02
1.25
0.75
0.25
100
0.1
1.0
0.5
10
(T
0
0.005
1
J
0
Figure 4. On−Resistance vs. Drain Current and
= 25°C unless otherwise noted)
V
V
T
GS
DS
Figure 6. Drain−to−Source Leakage Current
J
V
= 25°C
V
= 0 V
= 5 V
DS,
1.2
GS
5
Figure 2. Transfer Characteristics
, GATE−TO−SOURCE VOLTAGE (VOLTS)
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.055
I
D,
DRAIN CURRENT (AMPS)
1.4
10
Gate Voltage
V
V
vs. Voltage
T
GS
GS
J
T
T
0.105
1.6
J
= 125°C
J
15
= 4.5 V
= 10 V
= 125°C
= 150°C
25°C
1.8
20
0.155
T
J
= −55°C
2
25
0.205
2.2
30