NTJD4001NT1G ON Semiconductor, NTJD4001NT1G Datasheet - Page 4

• Manufacturer Part Number: NTJD4001NT1G
• Description: MOSFET 2N-CH 30V 250MA SOT-363
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTJD4001NT1G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 250mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 1.3nC @ 5V
• Input Capacitance (ciss) @ Vds: 33pF @ 5V
• Power - Max: 272mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohm @ 4 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.25 A
• Power Dissipation: 272 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 1.5Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTJD4001NT1GOS; NTJD4001NT1GOS; NTJD4001NT1GOSTR

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
50
40
30
20
10
100
0.000001
0
0.1
10
10
1
C
C
iss
rss
D = 0.5
0.2
0.1
0.05
0.02
0.01
V
SINGLE PULSE
DS
5
= 0 V
Figure 7. Capacitance Variation
V
0.00001
GS
0
V
V
GS
DS
TYPICAL PERFORMANCE CURVES
= 0 V
5
0.0001
0.08
0.06
0.04
0.02
0.1
10
0
0.5
Figure 9. Diode Forward Voltage vs. Current
V
T
15
V
J
GS
SD
= 25°C
0.001
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Thermal Response
0.55
T
J
20
= 25°C
http://onsemi.com
C
C
C
PULSE TIME t,(s)
iss
oss
rss
25
0.6
0.01
4
0.65
(T
5
4
3
2
1
0
0
J
0.1
= 25°C unless otherwise noted)
Figure 8. Gate−to−Source Voltage vs. Total
Q
GS
0.7
0.2
Q
G
, TOTAL GATE CHARGE (nC)
1
0.75
Q
0.4
Gate Charge
GD
Q
G
10
0.6
100
0.8
I
T
D
J
= 0.1 A
= 25°C
1000
1