NTJD4001NT1G ON Semiconductor, NTJD4001NT1G Datasheet - Page 2

• Manufacturer Part Number: NTJD4001NT1G
• Description: MOSFET 2N-CH 30V 250MA SOT-363
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTJD4001NT1G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 250mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 1.3nC @ 5V
• Input Capacitance (ciss) @ Vds: 33pF @ 5V
• Power - Max: 272mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohm @ 4 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.25 A
• Power Dissipation: 272 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 1.5Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTJD4001NT1GOS; NTJD4001NT1GOS; NTJD4001NT1GOSTR

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Parameter
(Note 2)
V
(T
V
V
(BR)DSS
Symbol
Q
V
GS(TH)
R
J
Q
td
(BR)DSS
td
C
C
GS(TH)
I
I
C
G(TOT)
Q
Q
= 25°C unless otherwise stated)
DS(on)
V
g
G(TH)
DSS
GSS
(OFF)
t
OSS
RSS
(ON)
RR
ISS
tr
FS
GD
tf
SD
GS
/T
/T
J
J
V
http://onsemi.com
V
V
I
GS
V
S
V
V
V
V
V
V
GS
V
GS
I
V
GS
D
GS
= 10 mA
GS
GS
GS
DS
DS
GS
GS
= 0 V, dI
= 10 mA, R
= 4.5 V, V
= 0 V,
Test Condition
= 5.0 V, V
= 3.0 V, I
= 0 V, f = 1.0 MHz,
= 0 V, V
= V
= 4.0 V, I
= 2.5 V, I
= 0 V, I
= 0 V, V
V
I
I
S
DS
D
2
DS
= 10 mA
= 0.1 A
S
= 5.0 V
, I
/dt = 8.0 A/ms,
D
GS
D
DS
D
D
D
DD
DS
= 100 mA
G
= 100 mA
= 10 mA
= 10 mA
= 10 mA
= ±10 V
= 50 W
T
= 30 V
= 5.0 V,
= 24 V,
T
J
J
= 125°C
= 25°C
Min
0.8
30
−3.2
7.25
0.65
0.45
12.4
Typ
1.2
1.0
1.5
0.9
0.2
0.3
0.2
56
80
20
19
17
23
94
82
Max
±1.0
1.0
1.5
1.5
2.5
1.3
0.7
33
32
12
mV/ °C
mV/ °C
Unit
mS
mA
mA
nC
pF
ns
ns
W
V
V
V