NTHD4502NT1 ON Semiconductor, NTHD4502NT1 Datasheet - Page 3

• Manufacturer Part Number: NTHD4502NT1
• Description: MOSFET N-CHAN DUAL 30V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD4502NT1

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 15V
• Power - Max: 640mW
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

7. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
DRAIN−SOURCE DIODE CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 7)
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Parameter
(continued) (T
Symbol
t
t
t
t
d(OFF)
d(OFF)
Q
Q
d(ON)
d(ON)
V
t
t
RR
RR
t
t
t
t
SD
RR
RR
r
f
r
f
J
http://onsemi.com
= 25°C unless otherwise noted)
NTHD4502N
V
V
GS
V
I
V
GS
V
D
3
GS
GS
I
GS
dI
= 2.9 A, R
Test Conditions
dI
D
= 4.5 V, V
= 10 V, V
S
S
= 1 A, R
= 0 V, I
= 0 V, I
= 0 V, I
/dt = 100 A/ms
/dt = 100 A/ms
S
S
S
DD
G
G
DD
= 2.9 A,
= 1.0 A,
= 2.5 A
= 6 W
= 2.5 W
= 24 V,
= 24 V,
Min
0.85
14.9
12.6
Typ
8.6
4.0
8.4
4.0
6.5
5.4
1.8
7.8
9.6
2.8
Max
1.2
5.0
12
10
25
Units
nC
nC
ns
ns
ns
ns
V