NTHD4502NT1 ON Semiconductor, NTHD4502NT1 Datasheet - Page 4

• Manufacturer Part Number: NTHD4502NT1
• Description: MOSFET N-CHAN DUAL 30V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD4502NT1

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 15V
• Power - Max: 640mW
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

0.25
0.15
0.05
10
0.3
0.2
0.1
8
6
4
2
0
0
1.6
1.4
1.2
0.8
1.8
1.0
0.6
0
2
Figure 3. On−Resistance vs. Gate−to−Source
−50
I
V
V
D
V
GS
DS
Figure 1. On−Region Characteristics
= 2.9 A
3
GS
−25
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
Figure 5. On−Resistance Variation with
= 10 V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
T
4
J
T
, JUNCTION TEMPERATURE (°C)
J
0
V
= 25°C
2
GS
5
= 10, 6, 5, 4.5 & 4.2 V resp.
Voltage
25
Temperature
3
6
50
7
4
75
TYPICAL PERFORMANCE CURVES
8
100
I
T
5
D
J
= 2.9 A
= 25°C
3.8 V
3.6 V
2.8 V
2.6 V
3.4 V
3.2 V
9
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3 V
125
4 V
NTHD4502N
6
10
150
4
1000
0.12
0.10
0.09
0.08
0.07
0.11
100
0.1
10
1
6
5
4
3
2
1
0
5
Figure 4. On−Resistance vs. Drain Current and
2
1
V
V
T
GS
Figure 6. Drain−to−Source Leakage Current
DS
J
V
V
= 25°C
≥ 10 V
25°C
= 0 V
DS
GS
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
2
I
D,
100°C
3
DRAIN CURRENT (AMPS)
Gate Voltage
T
15
J
3
T
T
vs. Voltage
V
V
= −55°C
J
J
GS
GS
= 150°C
= 100°C
= 4.5 V
= 10 V
4
20
4
5
25
5
30
6
6