NTHD4502NT1 ON Semiconductor, NTHD4502NT1 Datasheet - Page 5

• Manufacturer Part Number: NTHD4502NT1
• Description: MOSFET N-CHAN DUAL 30V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD4502NT1

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 15V
• Power - Max: 640mW
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
0.1
300
200
100
10
1
0
1
10
Figure 9. Resistive Switching Time Variation
C
C
V
ISS
RSS
DS
t
t
d(off)
d(on)
t
= 0 V
5
t
f
r
V
Figure 7. Capacitance Variation
GS
R
G
, GATE RESISTANCE (OHMS)
0
vs. Gate Resistance
V
V
DS
GS
5
= 0 V
10
10
15
TYPICAL PERFORMANCE CURVES
20
V
I
V
D
DD
GS
= 1.0 A
T
= 24 V
= 10 V
J
25
http://onsemi.com
= 25°C
C
OSS
NTHD4502N
100
30
5
12
10
8
6
4
2
0
0
3
2
1
0
0.3
V
Q
Drain−to−Source Voltage vs. Total Charge
DS
GS
Figure 10. Diode Forward Voltage vs. Current
V
T
J
GS
V
= 25°C
SD
0.4
Figure 8. Gate−to−Source and
= 0 V
Q
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Q
1
G
GD
, TOTAL GATE CHARGE (nC)
0.5
Q
G
0.6
2
0.7
V
3
0.8
GS
I
T
D
J
= 2.9 A
= 25°C
0.9
4
24
20
16
12
8
4
0
1