SI3853DV-T1-E3 Vishay, SI3853DV-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI3853DV-T1-E3
• Description: MOSFET P-CH 20V 1.6A 6-TSOP
• Manufacturer: Vishay

Specifications of SI3853DV-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 500mV @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: +/- 1.6 A
• Power Dissipation: 0.83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.8A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Power Dissipation Pd: 830mW
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3853DV-T1-E3TR

MOSFET TYPICAL CHARACTERISTICS T
Document Number: 70979
S09-2276-Rev. B, 02-Nov-09
4.5
3.6
2.7
1.8
0.9
0.6
0.5
0.4
0.3
0.2
0.1
10
0
8
6
4
2
0
0
0
0
0
V
GS
V
I
= 4.5 V thru 4 V
D
DS
1
= 1.8 A
On-Resistance vs. Drain Current
0.6
= 10 V
V
1
V
GS
DS
Output Characteristics
Q
= 2.5 V
g
2
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
1.2
2
3
4
1.8
3
V
GS
3.5 V
= 3.6 V
2.5 V
1.5 V
V
5
3 V
2 V
GS
2.4
= 4.5 V
4
6
3.0
A
5
7
= 25 °C, unless otherwise noted
450
360
270
180
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
90
8
6
4
2
0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
- 25
rss
0.5
V
I
D
GS
= 1.8 A
C
oss
= 10 V
4
V
V
1.0
T
GS
Transfer Characteristics
0
DS
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
1.5
25
Capacitance
8
2.0
50
T
C
C
iss
Vishay Siliconix
= - 55 °C
25 °C
12
2.5
75
Si3853DV
100
3.0
www.vishay.com
16
125 °C
125
3.5
150
4.0
20
3