Si3853DV Vishay Siliconix, Si3853DV Datasheet

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Si3853DV

Manufacturer Part Number
Si3853DV
Description
P-Channel 20-V (D-S) MOSFET With Schottky Diode
Manufacturer
Vishay Siliconix
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
Si3853DV-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
Si3853DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
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Company:
Part Number:
Si3853DV-T1-E3
Quantity:
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Notes
a.
Document Number: 70979
S-61846—Rev. A, 04-Oct-99
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
V
V
Surface Mounted on 1” x1” FR4 Board.
DS
KA
–20
–20
20
(V)
(V)
P-Channel 20-V (D-S) MOSFET With Schottky Diode
3 mm
Diode Forward Voltage
0.200 @ V
0.340 @ V
0.48 V @ 0.5 A
r
J
J
DS(on)
G
A
S
= 150 C) (MOSFET)
= 150 C) (MOSFET)
V
Parameter
f
GS
GS
(v)
( )
= –4.5 V
= –2.5 V
a
a
a
a
Top View
1
2
3
TSOP-6
2.85 mm
a
a
6
5
4
a
I
I
D
F
0.5
1.3
(A)
(A)
1.8
K
N/C
D
T
T
T
T
T
T
A
A
A
A
A
A
New Product
= 25 C
= 70 C
= 25 C
= 70 C
= 25 C
= 70 C
Symbol
T
V
J
V
V
I
I
P
P
P
, T
DM
I
I
I
I
FM
G
DS
KA
GS
D
D
S
F
D
D
stg
P-Channel MOSFET
S
D
5 sec
–1.05
1.15
0.73
0.64
1.0
1.8
1.5
12
–55 to 150
www.vishay.com FaxBack 408-970-5600
–20
20
0.5
7
K
A
7
Vishay Siliconix
Steady State
–0.75
0.83
0.53
0.76
0.48
1.6
1.2
12
Si3853DV
Unit
W
W
W
V
V
A
A
A
A
C
2-1

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Si3853DV Summary of contents

Page 1

... C 1 – stg Si3853DV Vishay Siliconix K A Steady State Unit – 1.6 1 –0.75 0.5 7 0.83 0. 0.76 0.48 –55 to 150 C www.vishay.com FaxBack 408-970-5600 2-1 ...

Page 2

... Si3853DV Vishay Siliconix Parameter Junction-to-Ambient Junction-to-Ambient Junction-to-Foot Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current ...

Page 3

... 2 1 450 360 270 180 = 4 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 2.4 3.0 –50 Si3853DV Vishay Siliconix Transfer Characteristics T = – 125 C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs ...

Page 4

... Si3853DV Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.1 0.00 0.3 0.6 0.9 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 A D 0.4 0.2 0.0 –0.2 –0.4 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 – ...

Page 5

... Square Wave Pulse Duration (sec 0.1 125 150 0 Capacitance 150 120 – Reverse Voltage (V KA Si3853DV Vishay Siliconix 1 10 Forward Voltage Drop T = 150 0.2 0.4 0.6 0.8 1.0 V – Forward Voltage Drop ( www.vishay.com FaxBack 408-970-5600 2-5 ...

Page 6

... Si3853DV Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – www.vishay.com FaxBack 408-970-5600 2-6 New Product –2 – Square Wave Pulse Duration (sec) – ...

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