Si3853DV Vishay Siliconix, Si3853DV Datasheet - Page 3

• Manufacturer Part Number: Si3853DV
• Description: P-Channel 20-V (D-S) MOSFET With Schottky Diode
• Manufacturer: Vishay Siliconix

Document Number: 70979
S-61846—Rev. A, 04-Oct-99
0.6
0.5
0.4
0.3
0.2
0.1
4.5
3.6
2.7
1.8
0.9
10
8
6
4
2
0
0
0
V
0
0
0
GS
= 4.5 thru 4 V
V
V
I
GS
D
DS
1
= 1.8 A
On-Resistance vs. Drain Current
= 2.5 V
0.6
V
= 10 V
1
DS
Q
Output Characteristics
g
2
– Drain-to-Source Voltage (V)
I
D
– Total Gate Charge (nC)
– Drain Current (A)
Gate Charge
1.2
2
3
4
1.8
3
V
GS
= 3.6 V
V
5
GS
3.5 V
2.5 V
1.5 V
3 V
2 V
2.4
= 4.5 V
4
6
3.0
5
7
New Product
450
360
270
180
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
90
8
6
4
2
0
0
–50
0
0
On-Resistance vs. Junction Temperature
C
rss
–25
0.5
V
I
D
GS
= 1.8 A
V
V
= 10 V
4
DS
GS
T
C
1.0
Transfer Characteristics
J
0
oss
– Junction Temperature ( C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
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1.5
Capacitance
25
8
Vishay Siliconix
2.0
50
T
25 C
C
C
iss
= –55 C
12
2.5
75
Si3853DV
100
3.0
16
125 C
125
3.5
150
2-3
4.0
20