SI3853DV-T1-E3 Vishay, SI3853DV-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI3853DV-T1-E3
• Description: MOSFET P-CH 20V 1.6A 6-TSOP
• Manufacturer: Vishay

Specifications of SI3853DV-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 500mV @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: +/- 1.6 A
• Power Dissipation: 0.83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.8A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Power Dissipation Pd: 830mW
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3853DV-T1-E3TR

MOSFET TYPICAL CHARACTERISTICS T
SCHOTTKY TYPICAL CHARACTERISTICS T
Document Number: 70979
S09-2276-Rev. B, 02-Nov-09
0.0001
0.001
0.01
0.01
0.1
20
10
0.1
1
2
1
10
0
Reverse Current vs. Junction Temperature
-4
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
25
Single Pulse
20 V
T
J
- Junction Temperature (°C)
50
10
75
-3
10 V
Normalized Thermal Transient Impedance, Junction-to-Foot
150
120
100
90
60
30
0
0
125
4
Square Wave Pulse Duration (s)
10
A
150
-2
= 25 °C, unless otherwise noted
V
KA
A
Capacitance
- Reverse Voltage (V)
= 25 °C, unless otherwise noted
8
12
10
0.1
-1
5
1
16
0
T
J
0.2
20
= 150 °C
V
Forward Voltage Drop
F
- Forward Voltage Drop (V)
0.4
1
T
J
Vishay Siliconix
= 25 °C
0.6
Si3853DV
www.vishay.com
0.8
1
0
1.0
5