STA506 STMicroelectronics, STA506 Datasheet - Page 4
STA506
Manufacturer Part Number
STA506
Description
Audio Amplifiers 40V 4.0A Half Bridge
Manufacturer
STMicroelectronics
Datasheet
1.STA506.pdf
(14 pages)
Specifications of STA506
Product
Class-AB
Output Power
80 W
Operating Supply Voltage
12 V, 15 V, 18 V
Supply Current
50 mA
Maximum Power Dissipation
50000 mW
Maximum Operating Temperature
+ 70 C
Audio Load Resistance
8 Ohms
Input Signal Type
Single
Minimum Operating Temperature
0 C
Output Signal Type
Differential
Supply Type
Single
Supply Voltage (max)
36 V
Supply Voltage (min)
10 V
Output Type
1-Channel Mono or 2-Channel Stereo
Package / Case
PowerSO-38 Slug Up
No. Of Channels
4
Supply Voltage Range
10V To 36V
Load Impedance
8ohm
Operating Temperature Range
-40°C To +90°C
Amplifier Case Style
PowerSO
No. Of Pins
36
Svhc
No SVHC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STA506
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STA50613TR
Manufacturer:
MOTOROLA
Quantity:
250
Part Number:
STA50613TR
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STA5063Z
Manufacturer:
RFMD
Quantity:
5 000
Company:
Part Number:
STA5063ZPCK-EVB1
Manufacturer:
RFMD
Quantity:
5 000
Company:
Part Number:
STA5063ZPCK-EVB2
Manufacturer:
RFMD
Quantity:
5 000
Company:
Part Number:
STA5063ZSB
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
STA5063ZSR
Manufacturer:
RFMD
Quantity:
20 000
STA506
Table 4. Absolute Maximum Ratings
Table 5. (*) Recommended Operating Conditions
(*) performances not guaranteed beyond recommended operating conditions
Table 6. Thermal Data
Table 7. Electrical Characteristcs: refer to circuit in Fig.1 (V
fsw = 384KHz; T
4/14
Symbol
Symbol
Symbol
T
R
Symbol
t
T
V
T
t
Dt_s
Dt_d
T
V
T
t
d OFF
V
j-case
d ON
warn
hSD
dsON
I
V
V
amb
g
g
IN-H
V
stg
jSD
dss
P
CC
t
t
CC
T
N
P
r
f
L
max
CC
op
tot
, T
j
DC Supply Voltage
Input Logic Reference
Ambient Temperature
Thermal Resistance Junction to Case (thermal pad)
Thermal shut-down junction temperature
Thermal warning temperature
Thermal shut-down hysteresis
Power Pchannel/Nchannel
MOSFET RdsON
Power Pchannel/Nchannel
leakage Idss
Power Pchannel RdsON Matching Id=1A
Power Nchannel RdsON
Matching
Low current Dead Time (static)
High current Dead Time (dinamic) L=22µH; C = 470nF; R
Turn-on delay time
Turn-off delay time
Rise time
Fall time
Supply voltage operating voltage
High level input voltage
DC Supply Voltage (Pin 4,7,12,15)
Maximum Voltage on pins 23 to 32 (logic reference)
Power Dissipation (T
Operating Temperature Range
Storage and Junction Temperature
amb
Parameter
= 25°C unless otherwise specified)
case
= 70°C)
Parameter
Parameter
Parameter
Id=1A
V
Id=1A
see test circuit no.1; see fig. 3
Id=3.5A; see fig. 5
Resistive load
Resistive load
Resistive load; as fig.3
Resistive load; as fig. 3
CC
=35V
Test conditions
L
L
= 3.3V; V
= 8 Ω
CC
Min.
Min.
2.7
10
Min.
0
95
95
10
= 32V; R
-40 to 150
-40 to 90
Value
Typ.
Typ.
150
130
3.3
5.5
40
50
25
Typ.
200
10
L
= 8Ω;
Max.
Max.
36.0
+300mV
5.0
1.5
70
Max.
V
270
100
100
50
20
50
25
25
36
L
/2
°C/W
Unit
Unit
Unit
°C
°C
°C
°C
Unit
°C
°C
W
mΩ
V
V
V
µA
v
ns
ns
ns
ns
ns
ns
%
%
V
V